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| PN2907A Preferred Device General Purpose Transistor PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C 1 2 Unit C/W C/W 3 mW mW/C Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc 2 BASE 1 EMITTER COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 TO-92 CASE 29 STYLE 1 MARKING DIAGRAM PN2 907A YWW PN2907A = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device PN2907A PN2907ARLRA Package TO-92 TO-92 Shipping 5000 Units/Box 2000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 August, 2001 - Rev. 0 Publication Order Number: PN2907A/D PN2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.) (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO - - IB - -0.01 -10 -50 nAdc -60 -60 -5.0 - - - - -50 Vdc Vdc Vdc nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (Note 1.) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1.) Collector-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 75 100 100 100 50 VCE(sat) - - VBE(sat) - - -1.3 -2.6 -0.4 -1.6 Vdc - - - 300 - Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Notes 1. and 2.), (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 - - - 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) Ad ) (Fi (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) 15 Ad ) (Fi d ton td tr toff ts tf - - - - - - 45 10 40 100 80 30 ns ns ns ns ns ns http://onsemi.com 2 PN2907A INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k -30 V 200 TO OSCILLOSCOPE RISE TIME 5.0 ns Figure 1. Delay and Rise Time Test Circuit INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 1.0 k 50 1N916 Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 3 PN2907A TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -55C IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.005 IC = -1.0 mA -10 mA -100 mA -500 mA -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT td @ VBE(off) = 0 V tr 500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn-Off Time http://onsemi.com 4 PN2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 6.0 4.0 2.0 0 IC = -50 A -100 A -500 A -1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 Ccb 100 80 60 40 30 20 -1.0 -2.0 f T, CURRENT-GAIN VCE = -20 V TJ = 25C -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -5.0 -10 -20 -50 -100 -200 -500 RqVC for VCE(sat) IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 PN2907A PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 PN2907A Notes http://onsemi.com 7 PN2907A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 PN2907A/D |
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